Infineon Si4435DYPbF Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SO-8 SI4435DYTRPBF
- RS Stock No.:
- 171-1913
- Mfr. Part No.:
- SI4435DYTRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 171-1913
- Mfr. Part No.:
- SI4435DYTRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Si4435DYPbF | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Si4435DYPbF | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Automotive Standard No | ||
Non Compliant
The Infineon SI4435DY is the 30V single P-channel HEXFET power MOSFET in a SO-8 package. These P-channel HEXFET power MOSFETs from International Rectifier utilize Advanced processing techniques to achieve the extremely low on-resistance per silicon area.
P-channel MOSFET
Surface mount
Available in tape and reel
Lead free
Related links
- Infineon Si4435DYPbF Type P-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 2 Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon Dual HEXFET 2 Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC IRF9362TRPBF
- Vishay Isolated TrenchFET 2 Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC SI4925DDY-T1-GE3
- Vishay Isolated TrenchFET 2 Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- DiodesZetex DMP3013 Type P-Channel MOSFET 30 V Enhancement, 6-Pin UDFN DMP3013SFK-7
- DiodesZetex DMP3013 Type P-Channel MOSFET 30 V Enhancement, 6-Pin UDFN
- Vishay SQ3495EV Type P-Channel MOSFET 30 V Enhancement, 6-Pin TSOP