STMicroelectronics DeepGate, STripFET Type N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin H2PAK

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Bulk discount available

Subtotal (1 reel of 1000 units)*

TWD81,400.00

(exc. GST)

TWD85,470.00

(inc. GST)

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Units
Per unit
Per Reel*
1000 - 4000TWD81.40TWD81,400.00
5000 +TWD79.80TWD79,800.00

*price indicative

RS Stock No.:
168-8819
Mfr. Part No.:
STH150N10F7-2
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

100V

Series

DeepGate, STripFET

Package Type

H2PAK

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

250W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

117nC

Maximum Operating Temperature

175°C

Length

10.4mm

Width

10.57 mm

Height

4.8mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel STripFET™ DeepGate™, STMicroelectronics


STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics


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