IXYS HiperFET, Q3-Class Type N-Channel MOSFET, 37 A, 800 V Enhancement, 4-Pin SOT-227 IXFN44N80Q3
- RS Stock No.:
- 168-4753
- Mfr. Part No.:
- IXFN44N80Q3
- Manufacturer:
- IXYS
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 10 units)*
TWD19,225.00
(exc. GST)
TWD20,186.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from July 01, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 10 - 40 | TWD1,922.50 | TWD19,225.00 |
| 50 + | TWD1,730.30 | TWD17,303.00 |
*price indicative
- RS Stock No.:
- 168-4753
- Mfr. Part No.:
- IXFN44N80Q3
- Manufacturer:
- IXYS
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | SOT-227 | |
| Series | HiperFET, Q3-Class | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 780W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 185nC | |
| Forward Voltage Vf | 1.4V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 25.07mm | |
| Height | 9.6mm | |
| Length | 38.23mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type SOT-227 | ||
Series HiperFET, Q3-Class | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 780W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 185nC | ||
Forward Voltage Vf 1.4V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 25.07mm | ||
Height 9.6mm | ||
Length 38.23mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
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- IXYS HiperFET 82 A 4-Pin SOT-227 IXFN100N50Q3
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