N-Channel MOSFET, 37 A, 800 V, 4-Pin SOT-227 IXYS IXFN44N80Q3
- RS Stock No.:
- 168-4753
- Mfr. Part No.:
- IXFN44N80Q3
- Manufacturer:
- IXYS
Bulk discount available
Subtotal (1 tube of 10 units)**
TWD18,060.00
(exc. GST)
TWD18,963.00
(inc. GST)
Temporarily out of stock - back order for despatch 29/12/2025, delivery within 6 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over TWD2,857.00 (ex VAT)
Units | Per unit | Per Tube** |
|---|---|---|
| 10 - 40 | TWD1,806.00 | TWD18,060.00 |
| 50 + | TWD1,625.40 | TWD16,254.00 |
**price indicative
- RS Stock No.:
- 168-4753
- Mfr. Part No.:
- IXFN44N80Q3
- Manufacturer:
- IXYS
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 37 A | |
| Maximum Drain Source Voltage | 800 V | |
| Series | HiperFET, Q3-Class | |
| Package Type | SOT-227 | |
| Mounting Type | Screw Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 6.5V | |
| Maximum Power Dissipation | 780 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 38.23mm | |
| Width | 25.07mm | |
| Typical Gate Charge @ Vgs | 185 nC @ 10 V | |
| Height | 9.6mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 37 A | ||
Maximum Drain Source Voltage 800 V | ||
Series HiperFET, Q3-Class | ||
Package Type SOT-227 | ||
Mounting Type Screw Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 6.5V | ||
Maximum Power Dissipation 780 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 38.23mm | ||
Width 25.07mm | ||
Typical Gate Charge @ Vgs 185 nC @ 10 V | ||
Height 9.6mm | ||
Minimum Operating Temperature -55 °C | ||