Vishay SiR418DP Type N-Channel MOSFET, 23 A, 40 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

TWD71,700.00

(exc. GST)

TWD75,300.00

(inc. GST)

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  • Shipping from November 02, 2026
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Units
Per unit
Per Reel*
3000 - 12000TWD23.90TWD71,700.00
15000 +TWD23.40TWD70,200.00

*price indicative

RS Stock No.:
165-7266
Mfr. Part No.:
SIR418DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

40V

Package Type

SO-8

Series

SiR418DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.71V

Typical Gate Charge Qg @ Vgs

50nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

39W

Maximum Operating Temperature

150°C

Length

6.25mm

Standards/Approvals

No

Height

1.12mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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