onsemi PowerTrench Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 146-1982
- Mfr. Part No.:
- FDB035AN06A0
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 800 units)*
TWD76,800.00
(exc. GST)
TWD80,640.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from May 29, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 3200 | TWD96.00 | TWD76,800.00 |
| 4000 + | TWD91.20 | TWD72,960.00 |
*price indicative
- RS Stock No.:
- 146-1982
- Mfr. Part No.:
- FDB035AN06A0
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 95nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 310W | |
| Forward Voltage Vf | 1.25V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Width | 11.33 mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 95nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 310W | ||
Forward Voltage Vf 1.25V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Width 11.33 mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi PowerTrench Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 FDB035AN06A0
- onsemi PowerTrench Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- onsemi PowerTrench Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 FDB050AN06A0
- onsemi PowerTrench Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- onsemi PowerTrench Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 FDP5800
- onsemi PowerTrench Type N-Channel MOSFET 80 V Enhancement, 7-Pin TO-263
- onsemi PowerTrench Type N-Channel MOSFET 80 V Enhancement, 7-Pin TO-263 FDB024N08BL7
- onsemi PowerTrench Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263