Vishay TrenchFET Type N-Channel MOSFET, 45.5 A, 30 V Enhancement, 8-Pin SO-8 SIRA88DP-T1-GE3

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 pack of 25 units)*

TWD165.00

(exc. GST)

TWD173.25

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from June 21, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Pack*
25 - 725TWD6.60TWD165.00
750 - 1475TWD6.40TWD160.00
1500 +TWD6.30TWD157.50

*price indicative

Packaging Options:
RS Stock No.:
134-9696
Mfr. Part No.:
SIRA88DP-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

45.5A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

10mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

25W

Typical Gate Charge Qg @ Vgs

16.8nC

Maximum Operating Temperature

150°C

Height

1.12mm

Standards/Approvals

No

Length

6.25mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links