onsemi 2N7000 Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin TO-92 2N7000TA
- RS Stock No.:
- 124-1310
- Mfr. Part No.:
- 2N7000TA
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 2000 units)*
TWD6,000.00
(exc. GST)
TWD6,300.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 4,000 unit(s) shipping from March 09, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 - 4000 | TWD3.00 | TWD6,000.00 |
| 6000 + | TWD2.90 | TWD5,800.00 |
*price indicative
- RS Stock No.:
- 124-1310
- Mfr. Part No.:
- 2N7000TA
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2N7000 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.8nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 400mW | |
| Forward Voltage Vf | 0.88V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.2mm | |
| Width | 4.19 mm | |
| Standards/Approvals | No | |
| Height | 5.33mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2N7000 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.8nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 400mW | ||
Forward Voltage Vf 0.88V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5.2mm | ||
Width 4.19 mm | ||
Standards/Approvals No | ||
Height 5.33mm | ||
Automotive Standard No | ||
Advanced Power MOSFET, Fairchild Semiconductor
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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