Vishay SQ3583CEV N channel, P-Channel MOSFET, 4.7 A, 20 V Enhancement, 6-Pin TSOP-6 SQ3583CEV-T1_GE3

N
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Subtotal (1 tape of 1 unit)*

TWD17.00

(exc. GST)

TWD17.85

(inc. GST)

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Tape(s)
Per Tape
1 - 24TWD17.00
25 - 99TWD11.00
100 +TWD6.00

*price indicative

RS Stock No.:
736-343
Mfr. Part No.:
SQ3583CEV-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N channel, P-Channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.7A

Maximum Drain Source Voltage Vds

20V

Series

SQ3583CEV

Package Type

TSOP-6

Mount Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance Rds

0.077Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

12V

Typical Gate Charge Qg @ Vgs

6nC

Maximum Power Dissipation Pd

1.67W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

COO (Country of Origin):
DE
The Vishay Dual MOSFET designed for high-reliability applications. This component utilizes TrenchFET technology to provide efficient power management in a Compact TSOP-6 package.

Qualified for automotive use according to AEC-Q101 standards

Undergoes 100 % Rg and UIS testing to ensure robust performance

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