Vishay SiH N channel-Channel MOSFET, 34 A, 650 V Enhancement, 4-Pin PowerPAK SO-8 SiHH068N60E

N
Bulk discount available

Subtotal (1 unit)*

TWD278.00

(exc. GST)

TWD291.90

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from November 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
1 - 9TWD278.00
10 - 49TWD172.00
50 - 99TWD134.00
100 +TWD90.00

*price indicative

RS Stock No.:
735-156
Mfr. Part No.:
SiHH068N60E
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

650V

Series

SiH

Package Type

PowerPAK SO-8

Mount Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance Rds

0.059Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

202W

Maximum Gate Source Voltage Vgs

10V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

53nC

Forward Voltage Vf

600V

Maximum Operating Temperature

150°C

Length

8mm

Standards/Approvals

RoHS

Width

8mm

Height

1mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

94A continuous drain current at TA=25°C

54.3nC typical total gate charge for fast switching

-55°C to +175°C extended junction temperature range

Related links