Vishay SiR N channel-Channel MOSFET, 473 A, 40 V Enhancement, 8-Pin PowerPAK SO-8S SiRS4400DP

N

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Subtotal (1 unit)*

TWD191.00

(exc. GST)

TWD200.55

(inc. GST)

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Units
Per unit
1 - 9TWD191.00
10 - 49TWD118.00
50 - 99TWD92.00
100 +TWD62.00

*price indicative

RS Stock No.:
735-143
Mfr. Part No.:
SiRS4400DP
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

473A

Maximum Drain Source Voltage Vds

40V

Series

SiR

Package Type

PowerPAK SO-8S

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00069Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

278W

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

40V

Typical Gate Charge Qg @ Vgs

195nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

5mm

Height

2mm

Length

6mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

278W maximum power dissipation at TC=25°C

195nC typical total gate charge

100% Rg and UIS tested for reliability

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