STMicroelectronics STP N channel-Channel Power MOSFET, 60 A, 100 V Enhancement, 2-Pin TO-252 STD70N10F4
- RS Stock No.:
- 719-650
- Mfr. Part No.:
- STD70N10F4
- Manufacturer:
- STMicroelectronics
N
Bulk discount available
View bulk pricing optionSubtotal (1 unit)*
TWD33.00
(exc. GST)
TWD34.65
(inc. GST)
FREE delivery for orders over NT$1,300.00
Being discontinued
- Final 227 unit(s), ready to ship from another location
Units | Per unit |
|---|---|
| 1 - 24 | TWD33.00 |
| 25 - 99 | TWD30.00 |
| 100 - 499 | TWD26.00 |
| 500 + | TWD25.00 |
*price indicative
- RS Stock No.:
- 719-650
- Mfr. Part No.:
- STD70N10F4
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | STP | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 0.0195Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 85nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.4mm | |
| Width | 6.6mm | |
| Length | 6.2mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series STP | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 0.0195Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 85nC | ||
Maximum Operating Temperature 175°C | ||
Height 2.4mm | ||
Width 6.6mm | ||
Length 6.2mm | ||
The STMicroelectronics STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performance.
Exceptional dv/dt capability
Extremely low on-resistance RDS(on)
100% avalanche tested
Related links
- STMicroelectronics STP N channel-Channel Power MOSFET 80 V Enhancement, 3-Pin TO-220 STP100N8F6
- STMicroelectronics STH N channel-Channel Power MOSFET 60 V Enhancement, 2-Pin H2PAK-2 STH345N6F7-2
- STMicroelectronics Sct N channel-Channel Power MOSFET 650 V Enhancement, 7-Pin HU3PAK SCT018HU65G3AG
- Infineon OptiMOS N channel-Channel Power MOSFET 40 V Enhancement, 8-Pin Tape & Reel IAUZN04S7N049ATMA1
- Infineon OptiMOS N channel-Channel Power MOSFET 40 V Enhancement, 8-Pin Tape & Reel IAUZN04S7L046ATMA1
- Infineon OptiMOS N channel-Channel Power MOSFET 40 V Enhancement, 8-Pin Tape & Reel IAUZN04S7N032ATMA1
- Infineon OptiMOS N channel-Channel Power MOSFET 40 V Enhancement, 8-Pin Tape & Reel IAUZN04S7N026ATMA1
- Infineon OptiMOS N channel-Channel Power MOSFET 40 V Enhancement, 8-Pin Tape & Reel IAUZN04S7L030ATMA1