Microchip TN0104 N-Channel Vertical DMOS FET-Channel Single MOSFETs, 450 mA, 40 V Enhancement Mode, 3-Pin TO-92-3
- RS Stock No.:
- 598-673
- Mfr. Part No.:
- TN0104N8-G
- Manufacturer:
- Microchip
Subtotal (1 reel of 2000 units)*
TWD66,400.00
(exc. GST)
TWD69,720.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from May 11, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | TWD33.20 | TWD66,400.00 |
*price indicative
- RS Stock No.:
- 598-673
- Mfr. Part No.:
- TN0104N8-G
- Manufacturer:
- Microchip
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | Single MOSFETs | |
| Channel Type | N-Channel Vertical DMOS FET | |
| Maximum Continuous Drain Current Id | 450mA | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-92-3 (TO-226AA) | |
| Series | TN0104 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.8Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1W | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Height | 5.3mm | |
| Width | 4.2 mm | |
| Length | 4.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type Single MOSFETs | ||
Channel Type N-Channel Vertical DMOS FET | ||
Maximum Continuous Drain Current Id 450mA | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-92-3 (TO-226AA) | ||
Series TN0104 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.8Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1W | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Height 5.3mm | ||
Width 4.2 mm | ||
Length 4.2mm | ||
Automotive Standard No | ||
The Microchip N Channel Enhancement-Mode Vertical low-threshold transistor is built using a vertical DMOS structure and a well-established silicon-gate manufacturing process. This design combines the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. Like all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Related links
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