- RS Stock No.:
- 897-7239
- Mfr. Part No.:
- IKW50N60H3FKSA1
- Manufacturer:
- Infineon
2 In stock for delivery within 6 working days
Added
Price (VAT excluded) Each (In a Pack of 2)
TWD196.50
(exc. GST)
TWD206.32
(inc. GST)
Units | Per unit | Per Pack* |
2 - 6 | TWD196.50 | TWD393.00 |
8 - 14 | TWD191.50 | TWD383.00 |
16 + | TWD179.00 | TWD358.00 |
*price indicative |
- RS Stock No.:
- 897-7239
- Mfr. Part No.:
- IKW50N60H3FKSA1
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 600 to 650V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.