Infineon, Type N-Channel IGBT, 160 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6664
- Mfr. Part No.:
- IKQ100N60TXKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 30 units)*
TWD5,124.00
(exc. GST)
TWD5,380.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 60 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 60 | TWD170.80 | TWD5,124.00 |
| 90 - 120 | TWD167.40 | TWD5,022.00 |
| 150 + | TWD164.00 | TWD4,920.00 |
*price indicative
- RS Stock No.:
- 215-6664
- Mfr. Part No.:
- IKQ100N60TXKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 160A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 714W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 15.9 mm | |
| Length | 41.2mm | |
| Height | 5.1mm | |
| Standards/Approvals | No | |
| Series | TrenchStop | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 160A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 714W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Width 15.9 mm | ||
Length 41.2mm | ||
Height 5.1mm | ||
Standards/Approvals No | ||
Series TrenchStop | ||
Automotive Standard No | ||
The Infineon insulated-gate bipolar transistor with positive temperature coefficient in saturation voltage has fast recovery anti-parallel emitter controlled diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Related links
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