STMicroelectronics STGW30H60DFB, N-Channel Trench Gate Field Stop IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 2 units)*

TWD215.00

(exc. GST)

TWD225.76

(inc. GST)

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Units
Per unit
Per Pack*
2 - 6TWD107.50TWD215.00
8 - 14TWD105.00TWD210.00
16 +TWD102.50TWD205.00

*price indicative

Packaging Options:
RS Stock No.:
860-7450
Mfr. Part No.:
STGW30H60DFB
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

30A

Product Type

Trench Gate Field Stop IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

260W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

N

Pin Count

3

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Height

20.15mm

Length

15.75mm

Series

HB

Width

5.15mm

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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