STMicroelectronics, N-Channel IGBT 650 V, 3-Pin TO-3P, Through Hole

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Subtotal 25 units (supplied in a tube)*

TWD6,125.00

(exc. GST)

TWD6,431.25

(inc. GST)

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  • Shipping from January 18, 2027
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Units
Per unit
25 - 99TWD245.00
100 - 249TWD237.00
250 +TWD231.00

*price indicative

Packaging Options:
RS Stock No.:
829-7136P
Mfr. Part No.:
STGWT80H65DFB
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

469W

Package Type

TO-3P

Mount Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Operating Temperature

175°C

Series

HB

Standards/Approvals

RoHS

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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