onsemi FGD3040G2-F085, Type N-Channel Ignition IGBT, 41 A 400 V, 3-Pin TO-252, Surface
- RS Stock No.:
- 807-0767
- Mfr. Part No.:
- FGD3040G2-F085
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD373.00
(exc. GST)
TWD391.65
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 20 unit(s) ready to ship from another location
- Plus 1,755 unit(s) shipping from June 22, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 620 | TWD74.60 | TWD373.00 |
| 625 - 1245 | TWD72.60 | TWD363.00 |
| 1250 + | TWD71.60 | TWD358.00 |
*price indicative
- RS Stock No.:
- 807-0767
- Mfr. Part No.:
- FGD3040G2-F085
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current Ic | 41A | |
| Product Type | Ignition IGBT | |
| Maximum Collector Emitter Voltage Vceo | 400V | |
| Maximum Power Dissipation Pd | 150W | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±10 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | EcoSPARK2 | |
| Automotive Standard | AEC-Q101 | |
| Energy Rating | 300mJ | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current Ic 41A | ||
Product Type Ignition IGBT | ||
Maximum Collector Emitter Voltage Vceo 400V | ||
Maximum Power Dissipation Pd 150W | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±10 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series EcoSPARK2 | ||
Automotive Standard AEC-Q101 | ||
Energy Rating 300mJ | ||
Automotive Ignition IGBT, Fairchild Semiconductor
These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.
Features
• Logic-level gate drive
• ESD Protection
• Applications: Automotive ignition coil driver circuits, Coil-on-Plug applications
RS Product Codes
864-8802 FGB3040CS 400V 20A D2PAK;864-8805 FGB3040G2_F085 400V 25A DPAK-2;807-0767 FGD3040G2_F085 400V 25A DPAK;864-8880 FGI3040G2_F085 400V 25A I2PAK;864-8899 FGP3040G2_F085 400V 25A TO220;864-8809 FGB3245G2_F085 450V 23A D2PAK-2;864-8827 FGD3245G2_F085 450V 23A DPAK;807-0776 FGD3440G2_F085 400V 25A DPAK;864-8818 FGB3440G2_F085 400V 25A D2PAK-2;864-8893 FGP3440G2_F085 400V 25A TO220;807-8751 ISL9V5036P3_F085 360V 31A TO220;862-9369 ISL9V5045S3ST_F085 450V 43A D2PAK
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Note
Quoted current ratings apply when junction temperature Tc = +110°C.
Standards
AEC-Q101