onsemi FGD3040G2-F085, N-Channel Ignition IGBT, 41 A 400 V, 3-Pin TO-252, Surface

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Subtotal (1 pack of 5 units)*

TWD346.00

(exc. GST)

TWD363.30

(inc. GST)

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  • 1,735 unit(s) shipping from November 02, 2026
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Units
Per unit
Per Pack*
5 - 620TWD69.20TWD346.00
625 - 1245TWD67.20TWD336.00
1250 +TWD66.40TWD332.00

*price indicative

Packaging Options:
RS Stock No.:
807-0767
Mfr. Part No.:
FGD3040G2-F085
Manufacturer:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current Ic

41A

Product Type

Ignition IGBT

Maximum Collector Emitter Voltage Vceo

400V

Maximum Power Dissipation Pd

150W

Package Type

TO-252

Mount Type

Surface

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

±10 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.5V

Maximum Operating Temperature

175°C

Series

EcoSPARK2

Standards/Approvals

RoHS

Energy Rating

300mJ

Automotive Standard

AEC-Q101

Automotive Ignition IGBT, Fairchild Semiconductor


These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.

Features


• Logic-level gate drive

• ESD Protection

• Applications: Automotive ignition coil driver circuits, Coil-on-Plug applications

RS Product Codes


864-8802 FGB3040CS 400V 20A D2PAK;864-8805 FGB3040G2_F085 400V 25A DPAK-2;807-0767 FGD3040G2_F085 400V 25A DPAK;864-8880 FGI3040G2_F085 400V 25A I2PAK;864-8899 FGP3040G2_F085 400V 25A TO220;864-8809 FGB3245G2_F085 450V 23A D2PAK-2;864-8827 FGD3245G2_F085 450V 23A DPAK;807-0776 FGD3440G2_F085 400V 25A DPAK;864-8818 FGB3440G2_F085 400V 25A D2PAK-2;864-8893 FGP3440G2_F085 400V 25A TO220;807-8751 ISL9V5036P3_F085 360V 31A TO220;862-9369 ISL9V5045S3ST_F085 450V 43A D2PAK

IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Note

Quoted current ratings apply when junction temperature Tc = +110°C.

Standards

AEC-Q101

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