STMicroelectronics STGW30NC120HD, N-Channel IGBT, 30 A 1.2 kV, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 795-9136
- Mfr. Part No.:
- STGW30NC120HD
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD304.00
(exc. GST)
TWD319.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 46 unit(s) ready to ship from another location
- Plus 46 unit(s) shipping from October 27, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 6 | TWD152.00 | TWD304.00 |
| 8 - 38 | TWD150.00 | TWD300.00 |
| 40 + | TWD145.50 | TWD291.00 |
*price indicative
- RS Stock No.:
- 795-9136
- Mfr. Part No.:
- STGW30NC120HD
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 30A | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Maximum Power Dissipation Pd | 220W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±25 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.75V | |
| Maximum Operating Temperature | 150°C | |
| Length | 14.8mm | |
| Height | 20.15mm | |
| Standards/Approvals | ECOPACK, JEDEC JESD97 | |
| Width | 15.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 30A | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Maximum Power Dissipation Pd 220W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±25 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.75V | ||
Maximum Operating Temperature 150°C | ||
Length 14.8mm | ||
Height 20.15mm | ||
Standards/Approvals ECOPACK, JEDEC JESD97 | ||
Width 15.75mm | ||
Automotive Standard No | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Related links
- RS PRO Black 3 mm² Hook Up Wire 30m
- RS PRO RS-172 Temperature & Humidity Data Logger
- 2961105 | Phoenix Contact PCB Mount Power Relay 6A Switching Current, SPDT
- Tedea Huntleigh Low Profile Load Cell Compression Measure
- ABB D45 Pluto Series Safety Controller 6 Safety Outputs, 24 V dc
- TE Connectivity Coaxial Cable RG400 Coaxial, Unterminated
- RS PRO I/O Extension Module for Use with RS PRO Logic Modules Digital
- Fluke 289 Handheld Digital Multimeter 10A ac Max 1000V ac Max