STMicroelectronics STGFW30V60DF, Type N-Channel Trench Gate Field Stop IGBT, 60 A 600 V, 3-Pin TO-3PF, Through Hole

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Subtotal 8 units (supplied in a tube)*

TWD684.00

(exc. GST)

TWD718.24

(inc. GST)

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Last RS stock
  • Final 18 unit(s), ready to ship from another location

Units
Per unit
8 - 14TWD85.50
16 +TWD83.50

*price indicative

Packaging Options:
RS Stock No.:
792-5779P
Mfr. Part No.:
STGFW30V60DF
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

Trench Gate Field Stop IGBT

Maximum Continuous Collector Current Ic

60A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

260W

Package Type

TO-3PF

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.3V

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

175°C

Width

5.7mm

Length

15.7mm

Standards/Approvals

ECOPACK

Height

26.7mm

Series

V

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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