STMicroelectronics, Type N-Channel IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal 10 units (supplied in a tube)*

TWD1,306.00

(exc. GST)

TWD1,371.30

(inc. GST)

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  • Shipping from January 06, 2027
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Units
Per unit
10 - 10TWD130.60
15 +TWD128.20

*price indicative

Packaging Options:
RS Stock No.:
791-7630P
Mfr. Part No.:
STGW30V60DF
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

60A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

258W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

20.15mm

Length

15.75mm

Standards/Approvals

RoHS

Width

5.15mm

Series

V

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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