Vishay VS-GT150TS065S, Type N-Channel Half Bridge IGBT, 372 A 650 V, 7-Pin INT-A-PAK, Panel
- RS Stock No.:
- 276-6405
- Mfr. Part No.:
- VS-GT150TS065S
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionSubtotal (1 unit)*
TWD4,066.00
(exc. GST)
TWD4,269.30
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 14 unit(s) shipping from June 01, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | TWD4,066.00 |
| 5 - 9 | TWD3,985.00 |
| 10 + | TWD3,905.00 |
*price indicative
- RS Stock No.:
- 276-6405
- Mfr. Part No.:
- VS-GT150TS065S
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Maximum Continuous Collector Current Ic | 372A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 789W | |
| Number of Transistors | 2 | |
| Configuration | Half Bridge | |
| Package Type | INT-A-PAK | |
| Mount Type | Panel | |
| Channel Type | Type N | |
| Pin Count | 7 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.32V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | UL E78996 | |
| Height | 30mm | |
| Length | 94.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Maximum Continuous Collector Current Ic 372A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 789W | ||
Number of Transistors 2 | ||
Configuration Half Bridge | ||
Package Type INT-A-PAK | ||
Mount Type Panel | ||
Channel Type Type N | ||
Pin Count 7 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.32V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals UL E78996 | ||
Height 30mm | ||
Length 94.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IT
The Vishay IGBT features Gen 4 FRED Pt technology anti parallel diodes with ultra soft reverse recovery characteristics. It is optimized for high current inverter stages (AC TIG welding machines).
UL approved
Very low conduction losses
Low EMI
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