Infineon F3L150R07W2E3B11BOMA1 IGBT Module, 650 A 150 V, 8-Pin Module, Panel

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Subtotal (1 tray of 15 units)*

TWD27,180.00

(exc. GST)

TWD28,539.00

(inc. GST)

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  • 15 unit(s) ready to ship from another location
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Units
Per unit
Per Tray*
15 - 90TWD1,812.00TWD27,180.00
105 +TWD1,775.80TWD26,637.00

*price indicative

RS Stock No.:
273-7364
Mfr. Part No.:
F3L150R07W2E3B11BOMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Continuous Collector Current Ic

650A

Maximum Collector Emitter Voltage Vceo

150V

Maximum Power Dissipation Pd

335W

Package Type

Module

Mount Type

Panel

Pin Count

8

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.9V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

UL (E83335)

Width

56.7 mm

Length

62.4mm

Height

16.4mm

Automotive Standard

No

The Infineon IGBT module has 650 V VCES, 150 A continuous DC collector current 3 level phase leg phase leg IGBT module with TRENCHSTOP IGBT3, Emitter Controlled 3 diode, NTC and Press FIT Contact Technology. This IGBT module increased blocking voltage capability to 650V and available with Al2O3 substrate with low thermal resistance.

Low VCEsat

Compact design

Rugged mounting

Low inductive design

Low Switching Losses

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