Infineon F3L100R07W2E3B11BOMA1 IGBT Module, 117 A 650 V Module, Panel

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Subtotal (1 tray of 15 units)*

TWD24,183.00

(exc. GST)

TWD25,392.15

(inc. GST)

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Units
Per unit
Per Tray*
15 - 90TWD1,612.20TWD24,183.00
105 +TWD1,580.00TWD23,700.00

*price indicative

RS Stock No.:
273-7362
Mfr. Part No.:
F3L100R07W2E3B11BOMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Continuous Collector Current Ic

117A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

300W

Package Type

Module

Mount Type

Panel

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.9V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Width

56.7 mm

Standards/Approvals

UL (E83335)

Length

62.8mm

Height

16.4mm

Automotive Standard

No

The Infineon IGBT module has 650 V VCES, 100 A continuous DC collector current 3 level phase leg phase leg IGBT module with TRENCHSTOP IGBT3, Emitter Controlled 3 diode, NTC and Press FIT Contact Technology. This IGBT module increased blocking voltage capability to 650V and available with Al2O3 substrate with low thermal resistance.

Low VCEsat

Compact design

Rugged mounting

Low inductive design

Low Switching Losses

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