Infineon IKQ40N120CH3XKSA1 Single IGBT, 80 A 1200 V PG-TO247-3-46
- RS Stock No.:
- 260-5092
- Mfr. Part No.:
- IKQ40N120CH3XKSA1
- Manufacturer:
- Infineon
Subtotal (1 unit)*
TWD257.00
(exc. GST)
TWD269.85
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 189 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 + | TWD257.00 |
*price indicative
- RS Stock No.:
- 260-5092
- Mfr. Part No.:
- IKQ40N120CH3XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 500 W | |
| Configuration | Single | |
| Package Type | PG-TO247-3-46 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 500 W | ||
Configuration Single | ||
Package Type PG-TO247-3-46 | ||
The Infineon hard switching high speed IGBT3 in TO247 PLUS package with soft, fast anti-parallel emitter controlled diode.
High efficiency in hard switching and resonant topologies
Easy paralleling capability due to positive temperature coefficient in VCEsat
Low gate charge QG
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