Infineon IGBT, 8 A 600 V TO-252
- RS Stock No.:
- 258-0997
- Mfr. Part No.:
- IKD04N60RC2ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 2500 units)*
TWD22,250.00
(exc. GST)
TWD23,350.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from July 23, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | TWD8.90 | TWD22,250.00 |
| 5000 + | TWD8.60 | TWD21,500.00 |
*price indicative
- RS Stock No.:
- 258-0997
- Mfr. Part No.:
- IKD04N60RC2ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 8A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 36.6W | |
| Package Type | TO-252 | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±25 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 8A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 36.6W | ||
Package Type TO-252 | ||
Maximum Gate Emitter Voltage VGEO ±20 ±25 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon TRENCHSTOP RC-Series RC-D2 with the monolithically integrated diode offers improvements of the performance, controllability and reliability compared to the RC-DF.
Low switching loses on competitive price
Improved controllability
Humidity Ruggedness improvement
Related links
- Infineon IKD04N60RC2ATMA1 IGBT 600 V PG-TO252-3
- Infineon IKD10N60RC2ATMA1 IGBT 600 V PG-TO252-3
- Infineon IKD15N60RC2ATMA1 IGBT 600 V PG-TO252-3
- Infineon IKD10N60RFATMA1 IGBT 600 V PG-TO252-3
- Infineon IKD06N60RC2ATMA1 IGBT 600 V PG-TO252-3
- Infineon IKD15N60RATMA1 IGBT 3-Pin PG-TO252-3
- Infineon ISA Type P 8.4 A 3-Pin PG-TO252-3 ISA220280C03LMDSXTMA1
- Infineon OptiMOS Type N-Channel MOSFET 600 V Enhancement, 3-Pin PG-TO252-3
