STMicroelectronics IGBT, 30 A 650 V H2PAK-2, Through Hole
- RS Stock No.:
- 248-4893
- Mfr. Part No.:
- STGH30H65DFB-2AG
- Manufacturer:
- STMicroelectronics
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Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 1000 units)*
TWD91,200.00
(exc. GST)
TWD95,760.00
(inc. GST)
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- Shipping from August 27, 2027
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Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | TWD91.20 | TWD91,200.00 |
| 2000 + | TWD88.50 | TWD88,500.00 |
*price indicative
- RS Stock No.:
- 248-4893
- Mfr. Part No.:
- STGH30H65DFB-2AG
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 30A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 260W | |
| Package Type | H2PAK-2 | |
| Mount Type | Through Hole | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.55V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.4mm | |
| Height | 4.7mm | |
| Standards/Approvals | RoHS | |
| Width | 15.8mm | |
| Series | STGH30H65DFB | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 30A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 260W | ||
Package Type H2PAK-2 | ||
Mount Type Through Hole | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.55V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.4mm | ||
Height 4.7mm | ||
Standards/Approvals RoHS | ||
Width 15.8mm | ||
Series STGH30H65DFB | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics product is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCEsat temperature coefficient and very tight parameter distribution result in safer paralleling operation.
AEC-Q101 qualified
High speed switching series
Safer paralleling
Tight parameter distribution
Low thermal resistance
Soft and very fast recovery antiparallel diode
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