Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1200V
	Number of Transistors	4
	Maximum Power Dissipation Pd	188W
	Package Type	Q0PACK - Case 180AB
	Mount Type	Surface
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Height	13.9mm
	Length	55.2mm
	Standards/Approvals	RoHS
	Width	32.8 mm
	Series	NXH80T120L3Q0S3G
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1200V
	Number of Transistors 4
	Maximum Power Dissipation Pd 188W
	Package Type Q0PACK - Case 180AB
	Mount Type Surface
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Height 13.9mm
	Length 55.2mm
	Standards/Approvals RoHS
	Width 32.8 mm
	Series NXH80T120L3Q0S3G
	Automotive Standard No

Datasheet - NXH80T120L3Q0S3G

The ON Semiconductor Q0PACK Module is a power module containing a T type neutral point clamped three level inverter stage. The integrated field stop trench IGBTs and fast recovery diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

Low Switching Loss

Low VCESAT

Compact 65.9 mm x 32.5 mm x 12 mm Package

Options with Pre applied Thermal Interface Material and without Pre applied TIM

Options with Solderable Pins and Press fit Pins thermistor

onsemi IGBT Module 1200 V Q0PACK - Case 180AB, Surface

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