Specifications

Product overview and Technical data sheets

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Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1200V
	Number of Transistors	2
	Maximum Power Dissipation Pd	186W
	Package Type	Case 180BF
	Mount Type	Surface
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Operating Temperature	150°C
	Length	55.2mm
	Height	13.9mm
	Series	NXH100B120H3Q0PG
	Width	32.8 mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1200V
	Number of Transistors 2
	Maximum Power Dissipation Pd 186W
	Package Type Case 180BF
	Mount Type Surface
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Operating Temperature 150°C
	Length 55.2mm
	Height 13.9mm
	Series NXH100B120H3Q0PG
	Width 32.8 mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - NXH100B120H3Q0PG

The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

1200 V Ultra Field Stop IGBTs

Low Reverse Recovery and Fast Switching SiC Diodes

1600 V Bypass and Anti parallel Diodes

Low Inductive Layout

Solderable Pins or Press Fit Pins

Thermistor options with Pre applied thermal interface Material and without pre applied TIM

onsemi NXH100B120H3Q0PG IGBT Module 1200 V Case 180BF, Surface

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