Infineon FZ825R33HE4DBPSA1 Single IGBT Module, 825 A 3300 V AG-IHVB130

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Bulk discount available

Subtotal (1 tray of 2 units)*

TWD82,454.00

(exc. GST)

TWD86,576.70

(inc. GST)

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Units
Per unit
Per Tray*
2 - 2TWD41,227.00TWD82,454.00
4 +TWD40,402.50TWD80,805.00

*price indicative

RS Stock No.:
236-5198
Mfr. Part No.:
FZ825R33HE4DBPSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Continuous Collector Current Ic

825A

Maximum Collector Emitter Voltage Vceo

3300V

Maximum Power Dissipation Pd

2400kW

Number of Transistors

2

Configuration

Single

Package Type

AG-IHVB130

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.65V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Width

62 mm

Length

109.9mm

Height

16.4mm

Standards/Approvals

60749, 60068, IEC 60747

Automotive Standard

No

The Infineon single switch IGBT Module is with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. This module has high power density and AlSiC base plate for increased thermal cycling capability.

VCES is 3300 V

IC nom is 825 A

ICRM is 1650 A

It retains high current density

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