Infineon FZ1600R33HE4BPSA1 Single IGBT Module, 1.6 kA 3300 V AG-IHVB130
- RS Stock No.:
- 236-5194
- Mfr. Part No.:
- FZ1600R33HE4BPSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 unit)*
TWD54,969.00
(exc. GST)
TWD57,717.45
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 2 unit(s) shipping from March 05, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 1 | TWD54,969.00 |
| 2 + | TWD53,869.00 |
*price indicative
- RS Stock No.:
- 236-5194
- Mfr. Part No.:
- FZ1600R33HE4BPSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 1.6 kA | |
| Maximum Collector Emitter Voltage | 3300 V | |
| Maximum Power Dissipation | 3600 kW | |
| Number of Transistors | 2 | |
| Configuration | Single | |
| Package Type | AG-IHVB130 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 1.6 kA | ||
Maximum Collector Emitter Voltage 3300 V | ||
Maximum Power Dissipation 3600 kW | ||
Number of Transistors 2 | ||
Configuration Single | ||
Package Type AG-IHVB130 | ||
The Infineon single switch IGBT Module is with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. This module has high power density and AlSiC base plate for increased thermal cycling capability.
VCES is 3300 V
IC nom is 1600 A
ICRM is 3200 A
It retains high current density
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