Infineon IKW40N120CS7XKSA1, N-Channel IGBT, 40 A 1.2 kV, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 232-6729
- Mfr. Part No.:
- IKW40N120CS7XKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 30 units)*
TWD4,863.00
(exc. GST)
TWD5,106.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 210 unit(s) shipping from January 14, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | TWD162.10 | TWD4,863.00 |
| 60 - 60 | TWD158.10 | TWD4,743.00 |
| 90 + | TWD154.90 | TWD4,647.00 |
*price indicative
- RS Stock No.:
- 232-6729
- Mfr. Part No.:
- IKW40N120CS7XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 40A | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V (Transient gate-emitter Voltage: ±25 V) | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Operating Temperature | 175°C | |
| Series | IKW40N120CS7 | |
| Width | 16.3mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Height | 5.3mm | |
| Length | 21.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 40A | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V (Transient gate-emitter Voltage: ±25 V) | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Operating Temperature 175°C | ||
Series IKW40N120CS7 | ||
Width 16.3mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Height 5.3mm | ||
Length 21.5mm | ||
Automotive Standard No | ||
Infineon IKW40N120CS7 Series IGBT, 1200V Collector-Emitter Voltage, 40A Collector Current - IKW40N120CS7XKSA1
This IGBT is a high-voltage semiconductor switch designed for use in power conversion and switching applications where robust collector-emitter blocking and gate control are required. It is a through-hole device in a TO-247 package intended for discrete mounting and thermal interfacing, suitable for industrial temperature ranges and JEDEC mechanical standards.
Features and Benefits:
• 1200 V collector-emitter rating for high-voltage switching capability
• 40 A continuous collector current for sustained load handling
• ±20 V gate-emitter limit allows tolerant gate-drive ranges
• 2 V maximum Vce(sat) reduces conduction losses under load
• N-channel device behaviour supports conventional gate-drive topologies
• JEDEC47/20/22 mechanical compliance aids assembly consistency
• 40 A continuous collector current for sustained load handling
• ±20 V gate-emitter limit allows tolerant gate-drive ranges
• 2 V maximum Vce(sat) reduces conduction losses under load
• N-channel device behaviour supports conventional gate-drive topologies
• JEDEC47/20/22 mechanical compliance aids assembly consistency
Applications
• Suitable for high-voltage inverter stages in industrial converters
• Used for motor drive power stages requiring 40 A handling
• Ideal for switch-mode power supplies with large voltage stress
• Can be used for medium-power induction heating systems
• Suitable for design prototypes using through-hole mounting
• Used for motor drive power stages requiring 40 A handling
• Ideal for switch-mode power supplies with large voltage stress
• Can be used for medium-power induction heating systems
• Suitable for design prototypes using through-hole mounting
What transient gate protection is indicated for gate excursions?
The gate-emitter rating permits transients up to ±25 V while the continuous limit is ±20 V, so transient suppression or snubbing is recommended.
What operating temperatures can be expected for deployed units?
The device is rated to operate from -40 °C up to 175 °C, enabling use across wide industrial temperature ranges.
How should thermal management be approached for sustained high current?
Use a suitable heatsink and thermal Interface to dissipate heat from the TO-247 package when conducting 40 A continuously to maintain junction temperatures within limits.
What pin configuration does the package present for PCB layout?
The through-hole TO-247 format provides three pins for electrical connection and a mounting tab for heat-sinking and mechanical support.
Are there constraints on channel type for circuit design?
The N-channel characteristic defines gate-drive polarity and switching arrangement and should be matched to driver circuits that provide an appropriate gate voltage range.
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