Infineon IKW25N120CS7XKSA1, N-Channel IGBT, 25 A 1.2 kV, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 232-6727
- Mfr. Part No.:
- IKW25N120CS7XKSA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 30 units)*
TWD4,119.00
(exc. GST)
TWD4,324.80
(inc. GST)
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In Stock
- 210 unit(s) ready to ship from another location
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | TWD137.30 | TWD4,119.00 |
| 60 - 60 | TWD133.90 | TWD4,017.00 |
| 90 + | TWD130.50 | TWD3,915.00 |
*price indicative
- RS Stock No.:
- 232-6727
- Mfr. Part No.:
- IKW25N120CS7XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 25A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 16.3mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | TRENCHSTOPTM IGBT 7 technology | |
| Length | 21.5mm | |
| Height | 5.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 25A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Operating Temperature 175°C | ||
Width 16.3mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Series TRENCHSTOPTM IGBT 7 technology | ||
Length 21.5mm | ||
Height 5.3mm | ||
Automotive Standard No | ||
Infineon TRENCHSTOPTM IGBT 7 technology Series IGBT, 1200V Collector-Emitter Voltage, 25A Collector Current - IKW25N120CS7XKSA1
This IGBT is a through-hole power transistor designed for high-voltage switching in industrial applications. It operates as an N-channel device in a TO-247 package and suits circuits requiring robust collector-emitter blocking and gate control. The component is specified for use across a wide ambient range and complies with recognised device mounting standards.
Features and Benefits:
• 1200 V collector-emitter rating for high-voltage switching capability
• 25 A continuous collector current enabling sustained load handling
• ±20 V gate-emitter tolerance for flexible gate-drive margins
• 2 V maximum Vce(sat) for reduced conduction losses at rated current
• Rated to 175 °C for operation in elevated-temperature environments
• 25 A continuous collector current enabling sustained load handling
• ±20 V gate-emitter tolerance for flexible gate-drive margins
• 2 V maximum Vce(sat) for reduced conduction losses at rated current
• Rated to 175 °C for operation in elevated-temperature environments
Applications
• Suitable for high-voltage power converters and inverters
• Ideal for switch-mode power supplies in industrial equipment
• Used with motor drives requiring sustained current handling
• Can be used for inductive-load switching in power systems
• Ideal for switch-mode power supplies in industrial equipment
• Used with motor drives requiring sustained current handling
• Can be used for inductive-load switching in power systems
What package type does it use for mounting and thermal handling?
It is supplied in a TO-247 package intended for through-hole mounting to facilitate heat-sinking and board installation.
What operating temperature range can it handle during service?
It is specified to function between -55 °C and 175 °C across the rated limits.
How many transistor elements are contained within the device?
The device comprises a single transistor element in the encapsulation.
Which reliability or standards approvals are referenced for device testing?
It carries approvals aligned with JEDEC 47/20/22 testing standards.
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