Infineon FP75R12N2T7BPSA1, Type N-Channel IGBT, 75 A 1.2 kV, 31-Pin Module, Through Hole
- RS Stock No.:
- 232-6719
- Mfr. Part No.:
- FP75R12N2T7BPSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 unit)*
TWD3,548.00
(exc. GST)
TWD3,725.40
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from March 13, 2026
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Units | Per unit |
|---|---|
| 1 - 9 | TWD3,548.00 |
| 10 - 19 | TWD3,476.00 |
| 20 - 29 | TWD3,406.00 |
| 30 - 39 | TWD3,340.00 |
| 40 + | TWD3,273.00 |
*price indicative
- RS Stock No.:
- 232-6719
- Mfr. Part No.:
- FP75R12N2T7BPSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 75A | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Maximum Power Dissipation Pd | 20mW | |
| Number of Transistors | 7 | |
| Package Type | Module | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 31 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.55V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 21.3mm | |
| Width | 45 mm | |
| Length | 107.5mm | |
| Series | FP75R12N2T7 | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 75A | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Maximum Power Dissipation Pd 20mW | ||
Number of Transistors 7 | ||
Package Type Module | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 31 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.55V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 21.3mm | ||
Width 45 mm | ||
Length 107.5mm | ||
Series FP75R12N2T7 | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon's EconoPIM 2, 75 A three phase PIM IGBT module comes with TRENCHSTOP IGBT7, Emitter Controlled 7 diode and NTC. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings. Also available with PressFIT technology. Potential applications include auxiliary inverters, motor drives and servo drives.
RoHS-compliant modules
Copper base plate for optimized heat spread
High power density
Related links
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