Infineon, Type N-Channel IGBT, 75 A 1200 V, 31-Pin Module, Chassis
- RS Stock No.:
- 232-6716
- Mfr. Part No.:
- FP75R12N2T7B11BPSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tray of 10 units)*
TWD37,930.00
(exc. GST)
TWD39,826.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from March 04, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 10 - 10 | TWD3,793.00 | TWD37,930.00 |
| 20 - 20 | TWD3,679.20 | TWD36,792.00 |
| 30 + | TWD3,605.50 | TWD36,055.00 |
*price indicative
- RS Stock No.:
- 232-6716
- Mfr. Part No.:
- FP75R12N2T7B11BPSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 20mW | |
| Package Type | Module | |
| Mount Type | Chassis | |
| Channel Type | Type N | |
| Pin Count | 31 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.55V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 21.3mm | |
| Length | 107.5mm | |
| Width | 45 mm | |
| Standards/Approvals | No | |
| Series | FP75R12N2T7_B11 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 20mW | ||
Package Type Module | ||
Mount Type Chassis | ||
Channel Type Type N | ||
Pin Count 31 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.55V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 21.3mm | ||
Length 107.5mm | ||
Width 45 mm | ||
Standards/Approvals No | ||
Series FP75R12N2T7_B11 | ||
Automotive Standard No | ||
The Infineon's EconoPIM 2, 75 A three phase PIM IGBT module comes with TRENCHSTOP IGBT7, Emitter Controlled 7 diode, NTC and PressFIT contact technology. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings. Potential applications include auxiliary inverters, motor drives and servo drives.
RoHS-compliant modules
Copper base plate for optimized heat spread
High power density
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