Infineon IHW30N120R5XKSA1, Type N-Channel IGBT Single Transistor IC, 60 A 1200 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 5 units)*

TWD573.00

(exc. GST)

TWD601.65

(inc. GST)

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  • 1,655 unit(s) ready to ship from another location
  • Plus 20 unit(s) shipping from June 12, 2026
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Per Pack*
5 +TWD114.60TWD573.00

*price indicative

Packaging Options:
RS Stock No.:
226-6078
Mfr. Part No.:
IHW30N120R5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Single Transistor IC

Maximum Continuous Collector Current Ic

60A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

330W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

25 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.55V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

Resonant Switching

Height

5.21mm

Length

42mm

Automotive Standard

No

The Infineon IHW30N120R5 power full monolithic body diode with low forward voltage designed for soft commutation only and has high ruggedness, temperature stable behaviour with low VCEsat.

Very tight parameter distribution

Low EMI

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