Infineon IGB50N65S5ATMA1 Single IGBT, 80 A 650 V, 3-Pin PG-TO263
- RS Stock No.:
- 226-6062
- Mfr. Part No.:
- IGB50N65S5ATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 reel of 1000 units)**
TWD56,900.00
(exc. GST)
TWD59,740.00
(inc. GST)
Temporarily out of stock - back order for despatch 17/07/2025, delivery within 6 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over TWD2,857.00 (ex VAT)
Units | Per unit | Per Reel** |
|---|---|---|
| 1000 - 4000 | TWD56.90 | TWD56,900.00 |
| 5000 + | TWD55.20 | TWD55,200.00 |
**price indicative
- RS Stock No.:
- 226-6062
- Mfr. Part No.:
- IGB50N65S5ATMA1
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Infineon | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | 30V | |
| Maximum Power Dissipation | 270 W | |
| Number of Transistors | 1 | |
| Configuration | Single | |
| Package Type | PG-TO263 | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
Select all | ||
|---|---|---|
Manufacturer Infineon | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage 30V | ||
Maximum Power Dissipation 270 W | ||
Number of Transistors 1 | ||
Configuration Single | ||
Package Type PG-TO263 | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||