Infineon IHW40N135R5XKSA1, Type N-Channel Reverse Conducting IGBT, 80 A 1350 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6643
- Mfr. Part No.:
- IHW40N135R5XKSA1
- Manufacturer:
- Infineon
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TWD405.00
(exc. GST)
TWD425.24
(inc. GST)
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- Plus 10 unit(s) shipping from August 17, 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD202.50 | TWD405.00 |
| 10 - 98 | TWD199.50 | TWD399.00 |
| 100 - 248 | TWD193.50 | TWD387.00 |
| 250 - 498 | TWD188.50 | TWD377.00 |
| 500 + | TWD175.00 | TWD350.00 |
*price indicative
- RS Stock No.:
- 215-6643
- Mfr. Part No.:
- IHW40N135R5XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Reverse Conducting IGBT | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 1350V | |
| Maximum Power Dissipation Pd | 394W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | ±25 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | Resonant Switching | |
| Standards/Approvals | JESD-022, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Reverse Conducting IGBT | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 1350V | ||
Maximum Power Dissipation Pd 394W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO ±25 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series Resonant Switching | ||
Standards/Approvals JESD-022, RoHS | ||
Automotive Standard No | ||
Infineon Resonant Switching Series Reverse Conducting IGBT, 1350V Max Collector Emitter Voltage, 80A Max Continuous Collector Current - IHW40N135R5XKSA1
This reverse-conducting IGBT is a high-voltage switching device designed for resonant converter topologies and power-electronics applications. It combines insulated-gate control with an integrated reverse-conduction path to simplify circuit design in high-voltage systems while operating across a wide ambient temperature range.
Features and Benefits:
• 1350V collector-emitter rating enables high-voltage switching capability
• 80A continuous collector current supports substantial load currents
• 1.65V typical Vce(sat) reduces conduction losses at high currents
• ±25V gate-emitter tolerance allows robust gate-drive margins
• 394W maximum power dissipation manages elevated thermal stress
• TO-247 through-hole package simplifies heatsinking and assembly
• 80A continuous collector current supports substantial load currents
• 1.65V typical Vce(sat) reduces conduction losses at high currents
• ±25V gate-emitter tolerance allows robust gate-drive margins
• 394W maximum power dissipation manages elevated thermal stress
• TO-247 through-hole package simplifies heatsinking and assembly
Applications
• Suitable for resonant converters in industrial power supplies
• Ideal for high-voltage inverters and switch-mode supplies
• Used with medium-power motor drives requiring reverse conduction
• Can be used for switch networks in renewable-energy systems
• Suitable for laboratory and bench prototyping with through-hole mounting
• Ideal for high-voltage inverters and switch-mode supplies
• Used with medium-power motor drives requiring reverse conduction
• Can be used for switch networks in renewable-energy systems
• Suitable for laboratory and bench prototyping with through-hole mounting
What temperature extremes can be expected during operation?
The device is specified to function from -40 °C up to 175 °C junction temperature, accommodating high-temperature switching environments.
How does the device simplify gate-drive design?
The gate-emitter rating of ±25V provides a wide allowable gate-voltage range, reducing sensitivity to drive transients and enabling flexible drive circuitry.
What package considerations affect thermal management?
Housed in a TO-247 through‑hole package, it allows direct attachment to external heatsinks and straightforward thermal interfacing for effective power dissipation.
Which regulatory or environmental standards apply to this component?
It conforms to RoHS and JESD-022 handling standards relevant to moisture sensitivity and hazardous-substance restrictions.
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