Infineon IHW20N135R5XKSA1, Type N-Channel IGBT Single Transistor IC, 40 A 1350 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6636
- Mfr. Part No.:
- IHW20N135R5XKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 5 units)*
TWD566.00
(exc. GST)
TWD594.30
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 15 unit(s) ready to ship from another location
- Plus 215 unit(s) shipping from June 11, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | TWD113.20 | TWD566.00 |
| 10 - 95 | TWD110.80 | TWD554.00 |
| 100 - 245 | TWD107.60 | TWD538.00 |
| 250 - 495 | TWD105.20 | TWD526.00 |
| 500 + | TWD102.20 | TWD511.00 |
*price indicative
- RS Stock No.:
- 215-6636
- Mfr. Part No.:
- IHW20N135R5XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Continuous Collector Current Ic | 40A | |
| Maximum Collector Emitter Voltage Vceo | 1350V | |
| Maximum Power Dissipation Pd | 310W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±25 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.21mm | |
| Series | Resonant Switching | |
| Standards/Approvals | IEC61249-2-21, RoHS | |
| Length | 42mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Single Transistor IC | ||
Maximum Continuous Collector Current Ic 40A | ||
Maximum Collector Emitter Voltage Vceo 1350V | ||
Maximum Power Dissipation Pd 310W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±25 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Maximum Operating Temperature 175°C | ||
Height 5.21mm | ||
Series Resonant Switching | ||
Standards/Approvals IEC61249-2-21, RoHS | ||
Length 42mm | ||
Automotive Standard No | ||
The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode offers high breakdown voltage of 1350v.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Related links
- Infineon 40 A 1350 V Through Hole
- Infineon 40 A 600 V Through Hole
- Infineon AIKW20N60CTXKSA1 40 A 600 V Through Hole
- Infineon 26 A 600 V Surface
- Infineon IKFW60N60DH3EXKSA1 53 A 600 V Through Hole
- Infineon 90 A 600 V Surface
- Infineon AIKW75N60CTXKSA1 80 A 600 V Through Hole
- Infineon IGB50N60TATMA1 90 A 600 V Surface