Infineon IGB50N60TATMA1, Type N-Channel IGBT Single Transistor IC, 90 A 600 V, 3-Pin TO-263, Surface

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Subtotal (1 pack of 2 units)*

TWD244.00

(exc. GST)

TWD256.20

(inc. GST)

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Per unit
Per Pack*
2 - 8TWD122.00TWD244.00
10 - 98TWD119.50TWD239.00
100 - 248TWD116.00TWD232.00
250 - 498TWD113.00TWD226.00
500 +TWD110.00TWD220.00

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Packaging Options:
RS Stock No.:
215-6630
Mfr. Part No.:
IGB50N60TATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Single Transistor IC

Maximum Continuous Collector Current Ic

90A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

333W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

1.5V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Series

TRENCHSTOPTM

Standards/Approvals

RoHS, JEDEC1

Automotive Standard

No

The Infineon low loss insulated-gate bipolar transistor in trenchstop and fieldstop technology.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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