STMicroelectronics STGP20H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-220
- RS Stock No.:
- 204-9876P
- Mfr. Part No.:
- STGP20H65DFB2
- Manufacturer:
- STMicroelectronics
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 204-9876P
- Mfr. Part No.:
- STGP20H65DFB2
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current (Ic) | 40 A | |
| Maximum Collector Emitter Voltage (Vceo) | 650 V | |
| Pin Count | 3 | |
| Package Type | TO-220 | |
| Maximum Gate Emitter Voltage (VGEO) | 20 V | |
| Number of Transistors | 1 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current (Ic) 40 A | ||
Maximum Collector Emitter Voltage (Vceo) 650 V | ||
Pin Count 3 | ||
Package Type TO-220 | ||
Maximum Gate Emitter Voltage (VGEO) 20 V | ||
Number of Transistors 1 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
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