Name: STMicroelectronics STGWA50HP65FB2 IGBT, 86 A 650 V, 3-Pin TO-247
Brand: STMicroelectronics
SKU: 204-3944P
Price: 95.13 TWD
Availability: InStock

The STMicroelectronics HB2 series 650 V IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

Maximum junction temperature of 175°C
Co-packaged protection diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive temperature coefficient

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Units	Per unit
10 - 10	TWD90.60
15 +	TWD89.20

Select all	Attribute	Value
	Manufacturer	STMicroelectronics
	Maximum Continuous Collector Current	86 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	20V
	Number of Transistors	1
	Maximum Power Dissipation	272 W
	Package Type	TO-247
	Channel Type	N
	Pin Count	3
	Transistor Configuration	Single

	Select all
	Manufacturer STMicroelectronics
	Maximum Continuous Collector Current 86 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage 20V
	Number of Transistors 1
	Maximum Power Dissipation 272 W
	Package Type TO-247
	Channel Type N
	Pin Count 3
	Transistor Configuration Single

STMicroelectronics STGWA50HP65FB2 IGBT, 86 A 650 V, 3-Pin TO-247

FREE delivery for orders over TWD2,857.00 (ex VAT)