Vishay SI7121ADN-T1-GE3 IGBT

RS Stock No.:: 180-7866
Mfr. Part No.:: SI7121ADN-T1-GE3
Manufacturer:: Vishay

540 In stock for delivery within 6 working days

Added

Price (VAT excluded) Each (In a Pack of 20)

TWD16.80

(exc. GST)

TWD17.64

(inc. GST)

Units	Per unit	Per Pack*
20 - 740	TWD16.80	TWD336.00
760 - 1480	TWD16.40	TWD328.00
1500 +	TWD16.10	TWD322.00
*price indicative

RS Stock No.:: 180-7866
Mfr. Part No.:: SI7121ADN-T1-GE3
Manufacturer:: Vishay

Product overview and Technical data sheets

Datasheet

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Vishay MOSFET

The Vishay surface mount P-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 25V. It has a drain-source resistance of 15mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 27.8W and continuous drain current of 18A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. With the help of this MOSFET, excellent performance and efficiency can be achieved at lower costs. The MOSFET offers excellent efficiency along with long productive life without compromising performance or functionality.

Features and Benefits

• Halogen free
• Low thermal resistance powerpak package with small size
• Maximum dissipation power is 27.8W
• Operating temperature ranges between -50°C and 150°C
• TrenchFET power MOSFET

Applications

• Mobile computing
• Adaptor switches
• Load switches - Battery management
• Notebook computers
• Power management

Certifications

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.