Littelfuse, Type N-Channel IGBT, 20 A 365 V, 3-Pin TO-263, Surface
- RS Stock No.:
- 171-0128
- Mfr. Part No.:
- NGB8207ABNT4G
- Manufacturer:
- Littelfuse
The image is for reference only, please refer to product details and specifications
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 171-0128
- Mfr. Part No.:
- NGB8207ABNT4G
- Manufacturer:
- Littelfuse
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Littelfuse | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 20A | |
| Maximum Collector Emitter Voltage Vceo | 365V | |
| Maximum Power Dissipation Pd | 165W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 6μs | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 15 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V | |
| Maximum Operating Temperature | 175°C | |
| Series | Ignition IGBT | |
| Length | 10.29mm | |
| Standards/Approvals | RoHS | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Energy Rating | 500mJ | |
| Select all | ||
|---|---|---|
Brand Littelfuse | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 20A | ||
Maximum Collector Emitter Voltage Vceo 365V | ||
Maximum Power Dissipation Pd 165W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 6μs | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 15 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V | ||
Maximum Operating Temperature 175°C | ||
Series Ignition IGBT | ||
Length 10.29mm | ||
Standards/Approvals RoHS | ||
Height 4.83mm | ||
Automotive Standard No | ||
Energy Rating 500mJ | ||
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Related links
- Littelfuse NGB8207ABNT4G 20 A 365 V Surface
- Littelfuse Type N-Channel SiC Power Module 12 V Enhancement, 3-Pin TO-263
- Littelfuse Type N-Channel SiC Power Module 12 V Enhancement, 3-Pin TO-263 IXFA36N60X3
- STMicroelectronics 20 A 600 V Surface
- Infineon 20 A 600 V Surface
- Littelfuse Type N-Channel SiC Power Module 12 V Enhancement, 3-Pin TO-268
- STMicroelectronics STGB10NC60KDT4 20 A 600 V Surface
- STMicroelectronics STGB10NC60HDT4 20 A 600 V Surface