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    Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

    The image is for reference only, please refer to product details and specifications

    Bulk discount available

    Subtotal (1 tube of 25 units)**

    TWD4,295.00

    (exc. GST)

    TWD4,509.75

    (inc. GST)

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    Temporarily out of stock - back order for despatch 04/08/2025, delivery within 6 working days*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Units
    Per unit
    Per Tube**
    25 - 100TWD171.80TWD4,295.00
    125 +TWD154.60TWD3,865.00

    **price indicative

    RS Stock No.:
    168-7767
    Mfr. Part No.:
    GT50JR21
    Manufacturer:
    Toshiba
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    Manufacturer

    Toshiba

    Maximum Continuous Collector Current

    50 A

    Maximum Collector Emitter Voltage

    600 V

    Maximum Gate Emitter Voltage

    ±25V

    Maximum Power Dissipation

    230 W

    Package Type

    TO-3P

    Mounting Type

    Through Hole

    Channel Type

    N

    Pin Count

    3

    Switching Speed

    1MHz

    Transistor Configuration

    Single

    Dimensions

    15.5 x 4.5 x 20mm

    Maximum Operating Temperature

    +175 °C