onsemi FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN, Through Hole
- RS Stock No.:
- 166-2181
- Mfr. Part No.:
- FGA60N65SMD
- Manufacturer:
- onsemi
This product is currently unavailable to backorder.
Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Added
Price (VAT excluded) Each (In a Tube of 30)
TWD118.30
(exc. GST)
TWD124.22
(inc. GST)
| Units | Per unit | Per Tube* |
| 30 - 30 | TWD118.30 | TWD3,549.00 |
| 60 - 90 | TWD115.80 | TWD3,474.00 |
| 120 + | TWD113.20 | TWD3,396.00 |
| *price indicative | ||
- RS Stock No.:
- 166-2181
- Mfr. Part No.:
- FGA60N65SMD
- Manufacturer:
- onsemi
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Discrete IGBTs, Fairchild Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 120 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 600 W |
| Package Type | TO-3PN |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.8 x 5 x 20.1mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |