Infineon FS150R12KT4BOSA1, N-Channel IGBT Module, 150 A 1.2 kV, 35-Pin EconoPACK 3, Clamp
- RS Stock No.:
- 166-0972
- Mfr. Part No.:
- FS150R12KT4BOSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tray of 10 units)*
TWD37,615.00
(exc. GST)
TWD39,495.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from April 21, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 10 - 40 | TWD3,761.50 | TWD37,615.00 |
| 50 + | TWD3,686.30 | TWD36,863.00 |
*price indicative
- RS Stock No.:
- 166-0972
- Mfr. Part No.:
- FS150R12KT4BOSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 150A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Maximum Power Dissipation Pd | 750W | |
| Package Type | EconoPACK 3 | |
| Mount Type | Clamp | |
| Channel Type | N | |
| Pin Count | 35 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 122mm | |
| Standards/Approvals | No | |
| Height | 17mm | |
| Width | 62mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 150A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Maximum Power Dissipation Pd 750W | ||
Package Type EconoPACK 3 | ||
Mount Type Clamp | ||
Channel Type N | ||
Pin Count 35 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Operating Temperature 150°C | ||
Length 122mm | ||
Standards/Approvals No | ||
Height 17mm | ||
Width 62mm | ||
Automotive Standard No | ||
RoHS Status: Not Applicable
- COO (Country of Origin):
- MY
Infineon IGBT Module, 1200V Max Collector Emitter Voltage, 150A Max Continuous Collector Current - FS150R12KT4BOSA1
This IGBT module is a power semiconductor device designed to switch and control high-voltage, high-current circuits in industrial power-electronic systems. It operates across a wide temperature span suitable for demanding environments and is housed in a compact clamp-mount package that integrates with standard power assemblies.
Features and Benefits:
• 1200V rating enables high-voltage switching capability
• 150A continuous current supports substantial load handling
• 2.1V Vce(sat) provides reduced conduction losses
• 750W power dissipation allows sustained power throughput
• 35 pins deliver multiple electrical interconnections
• 20V gate-emitter tolerance supports robust gate drive ranges
• 150A continuous current supports substantial load handling
• 2.1V Vce(sat) provides reduced conduction losses
• 750W power dissipation allows sustained power throughput
• 35 pins deliver multiple electrical interconnections
• 20V gate-emitter tolerance supports robust gate drive ranges
Applications
• Suitable for traction and motor-drive inverter stages
• Ideal for industrial converters and power supplies
• Used with three-phase inverters in renewable systems
• Can be used for induction heating power modules
• Appropriate for medium-voltage industrial drives
• Ideal for industrial converters and power supplies
• Used with three-phase inverters in renewable systems
• Can be used for induction heating power modules
• Appropriate for medium-voltage industrial drives
What mounting considerations are required for installation?
It uses a clamp-mounting arrangement that ensures secure mechanical contact and straightforward integration into existing heat-sink assemblies.
How does the device perform in elevated ambient conditions?
Rated to operate up to 150 °C junction temperature, it maintains switching capability across high-temperature duty cycles.
What gate-voltage constraints must be observed during drive design?
The gate-emitter voltage must not exceed 20V to avoid gate-device stress while enabling proper turn-on and turn-off control.
How tolerant is the module to low-temperature deployment?
It functions down to -40 °C, permitting use in cold-start conditions without compromising basic switching performance.
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