STMicroelectronics, Type N-Channel IGBT, 25 A 450 V, 3-Pin TO-263, Surface
- RS Stock No.:
- 164-7013P
- Mfr. Part No.:
- STGB20N45LZAG
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal 250 units (supplied on a reel)*
TWD25,550.00
(exc. GST)
TWD26,827.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 875 unit(s) shipping from August 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 250 - 495 | TWD102.20 |
| 500 + | TWD100.80 |
*price indicative
- RS Stock No.:
- 164-7013P
- Mfr. Part No.:
- STGB20N45LZAG
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 25A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 450V | |
| Maximum Power Dissipation Pd | 150W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 8.4μs | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 16 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.55V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.6mm | |
| Standards/Approvals | AEC-Q101 | |
| Width | 9.35mm | |
| Series | Automotive Grade | |
| Length | 10.4mm | |
| Energy Rating | 300mJ | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current Ic 25A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 450V | ||
Maximum Power Dissipation Pd 150W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 8.4μs | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 16 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.55V | ||
Maximum Operating Temperature 175°C | ||
Height 4.6mm | ||
Standards/Approvals AEC-Q101 | ||
Width 9.35mm | ||
Series Automotive Grade | ||
Length 10.4mm | ||
Energy Rating 300mJ | ||
Automotive Standard AEC-Q101 | ||
This application-specific IGBT utilizes the most Advanced PowerMESH™ technology optimized for Coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required
SCIS energy of 300 mJ @ TJ = 25 °C
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor
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