Infineon IKW75N65EL5XKSA1, Type N-Channel IGBT, 75 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 110-7176
- Mfr. Part No.:
- IKW75N65EL5XKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD599.00
(exc. GST)
TWD628.96
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 132 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 6 | TWD299.50 | TWD599.00 |
| 8 - 14 | TWD292.00 | TWD584.00 |
| 16 + | TWD273.50 | TWD547.00 |
*price indicative
- RS Stock No.:
- 110-7176
- Mfr. Part No.:
- IKW75N65EL5XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 536W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.21mm | |
| Series | TrenchStop | |
| Width | 21.1mm | |
| Standards/Approvals | RoHS | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Energy Rating | 7.22mJ | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 536W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V | ||
Maximum Operating Temperature 175°C | ||
Height 5.21mm | ||
Series TrenchStop | ||
Width 21.1mm | ||
Standards/Approvals RoHS | ||
Length 16.13mm | ||
Automotive Standard No | ||
Energy Rating 7.22mJ | ||
Infineon TrenchStop Series IGBT, 650V Max Collector Emitter Voltage, 75A Max Continuous Collector Current - IKW75N65EL5XKSA1
This IGBT is a high-voltage switching transistor designed for power conversion and control in demanding industrial environments. It operates across an extended temperature range and is supplied in a through-hole TO-247 package for straightforward mounting and heatsink attachment. The device suits applications requiring high collector current handling and efficient switching with low saturation losses.
Features and Benefits:
• 650V blocking capability supports high-voltage switching
• 75A continuous collector current enables high-current operation
• 1.35V low Vce(sat) reduces conduction losses
• 536W maximum power dissipation permits elevated thermal loading
• 20V gate-emitter rating allows robust gate drive margins
• 7.22 mJ energy rating accommodates high-energy switching events
• 75A continuous collector current enables high-current operation
• 1.35V low Vce(sat) reduces conduction losses
• 536W maximum power dissipation permits elevated thermal loading
• 20V gate-emitter rating allows robust gate drive margins
• 7.22 mJ energy rating accommodates high-energy switching events
Applications
• Suitable for industrial motor-drive inverters
• Used with power supplies in uninterruptible systems
• Ideal for high-power converters and UPS units
• Can be used for induction heating and welding power stages
• Suitable for renewable-energy inverter power sections
• Used with power supplies in uninterruptible systems
• Ideal for high-power converters and UPS units
• Can be used for induction heating and welding power stages
• Suitable for renewable-energy inverter power sections
What mounting format does it require for thermal management?
It is supplied in a TO-247 through-hole package, allowing direct attachment to standard heatsinks and using conventional screw mounting for efficient heat transfer.
What environmental extremes can it withstand during operation?
The device is specified to operate from -40 °C up to 175 °C, enabling use in harsh thermal environments and elevated junction temperatures.
What gate drive limitations should be observed?
The maximum permissible gate-emitter voltage is 20V, so gate drivers must remain within this range to prevent gate-oxide stress.
Is this component suited for automotive-grade deployments?
It is RoHS-compliant but is not classified as an automotive-standard device, so it should be evaluated against vehicle-specific requirements before use.
Related links
- Infineon 75 A 650 V Through Hole
- Infineon IGW75N65H5XKSA1 75 A 650 V Through Hole
- onsemi 75 A 650 V Through Hole
- onsemi AFGHL75T65SQ 75 A 650 V Through Hole
- onsemi AFGHL75T65SQDC 75 A 650 V Through Hole
- Infineon 75 A 650 V Through Hole
- Infineon IKZ75N65EH5XKSA1 75 A 650 V Through Hole
- ROHM RGSX5TS65EGC11 75 A 650 V Through Hole