onsemi FGY4L160T120SWD, N-Channel Common Emitter IGBT, 160 A 1.2 kV, 4-Pin TO-247-4L, Through Hole
- RS Stock No.:
- 277-079
- Mfr. Part No.:
- FGY4L160T120SWD
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD607.00
(exc. GST)
TWD637.35
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 7 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | TWD607.00 |
| 10 - 99 | TWD547.00 |
| 100 + | TWD504.00 |
*price indicative
- RS Stock No.:
- 277-079
- Mfr. Part No.:
- FGY4L160T120SWD
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current Ic | 160A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation Pd | 1.5kW | |
| Package Type | TO-247-4L | |
| Configuration | Common Emitter | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 4 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 22.54mm | |
| Length | 15.8mm | |
| Standards/Approvals | RoHS | |
| Width | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current Ic 160A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Number of Transistors 1 | ||
Maximum Power Dissipation Pd 1.5kW | ||
Package Type TO-247-4L | ||
Configuration Common Emitter | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 4 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 22.54mm | ||
Length 15.8mm | ||
Standards/Approvals RoHS | ||
Width 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ON Semiconductor IGBT and Gen7 Diode in a TO247 4-lead package offer optimal performance with low switching and conduction losses, enabling high-efficiency operations. These components are designed for use in various applications such as solar inverters, uninterruptible power supplies (UPS), and energy storage systems (ESS), providing reliable and efficient power management in these demanding environments.
High current capability
Smooth and optimized switching
Low switching loss
RoHS compliant
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