IXYS IXGH32N170, Type N-Channel IGBT, 75 A 1700 V, 3-Pin TO-247AD, Through Hole
- RS Stock No.:
- 194-899
- Distrelec Article No.:
- 302-53-415
- Mfr. Part No.:
- IXGH32N170
- Manufacturer:
- IXYS
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Bulk discount available
Subtotal (1 unit)*
TWD623.00
(exc. GST)
TWD654.15
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 1 unit(s) shipping from March 12, 2026
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Units | Per unit |
|---|---|
| 1 - 7 | TWD623.00 |
| 8 - 14 | TWD611.00 |
| 15 + | TWD599.00 |
*price indicative
- RS Stock No.:
- 194-899
- Distrelec Article No.:
- 302-53-415
- Mfr. Part No.:
- IXGH32N170
- Manufacturer:
- IXYS
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 75A | |
| Maximum Collector Emitter Voltage Vceo | 1700V | |
| Maximum Power Dissipation Pd | 350W | |
| Package Type | TO-247AD | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 250ns | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.3V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | UL 94 V-0 | |
| Series | High Voltage | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 75A | ||
Maximum Collector Emitter Voltage Vceo 1700V | ||
Maximum Power Dissipation Pd 350W | ||
Package Type TO-247AD | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 250ns | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 3.3V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals UL 94 V-0 | ||
Series High Voltage | ||
Automotive Standard No | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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